Our customer has developed an innovative LED display on silicium wafer (light-emitting diode) display technology that consists of arrays of μLEDs, each forming a pixel.
Customer main requirements
Reduce the driver’s area as much as possible to reduce pitch
Optimize the final application use by reducing the consumption significantly
Adaptative 20bits color depth
Internal supply generation from digital control signals
ASIC features
Production proven CMOS process
Driver ASIC area < 0.05 mm2
Temperature range: 0°C to 75°C
Close cooperation for ASIC wafer/LED wafer post-processing
Consumption : under 50nA
Design flow
From feasibility to product Tape-out
VT offset enabling very low power spread
Cooperation between analog and digital teams
Custom digital flow for nanopower target
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